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Si4812BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.016 at V GS = 10 V
0.021 at V GS = 4.5 V
I D (A)
9.5
7.7
? Halogen-free According to IEC 61249-2-21
Available
? LITTLE FOOT ? Plus Power MOSFET
? 100 % R g Tested
SCHOTTKY PRODUCT SUMMARY
V SD (V)
V DS (V)
30
Diode Forward Voltage
0.50 V at 1.0 A
SO-8
I F (A)
1.4
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Schottky Diode
Top View
Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free)
Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwis e noted
Limit
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Symbol
V DS
V GS
10 s
30
30
± 20
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) (MOSFET) a, b
Pulsed Drain Current (MOSFET)
T A = 25 °C
T A = 70 °C
I D
I DM
9.5
7.7
50
7.3
5.9
Continuous Source Current (MOSFET Diode
Average Forward Current (Schottky)
Conduction) a, b
I S
I F
2.1
1.4
1.2
0.8
A
Pulsed Forward Current (Schottky)
I FM
30
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I AS
E AS
5
1.25
mJ
Maximum Power Dissipation (MOSFET) a, b
Maximum Power Dissipation (Schottky) a, b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
P D
T J , T stg
2.5
1.6
2.0
1.3
- 55 to 150
1.4
0.9
1.2
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t ≤ 10 s) a
Maximum Junction-to-Ambient (t = Steady
State) a
MOSFET
Schottky
MOSFET
Schottky
R thJA
40
50
72
85
50
60
90
100
°C/W
Maximum Junction-to-Foot (t = Steady State) a
MOSFET
Schottky
R thJF
18
24
23
30
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
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